Mg dopantinCu2ZnSnSe4: An n-type formerandapromoter of electricalmobilityupto120cm2 V 1 s 1

dc.contributor.author	Hau Kuo, Dong-
dc.contributor.author	Wubet, Walelign
dc.date.accessioned	2019-03-04T07:02:27Z
dc.date.available	2019-03-04T07:02:27Z
dc.date.issued	2014-03-29
dc.identifier.uri	http://hdl.handle.net/123456789/2000
dc.description.abstract	Mg-doped Cu2ZnSnSe4 (CZTSe) bulkmaterialswiththe(Cu2 xMgx)ZnSnSe4 formula at x¼0, 0.1,0.2,0.3, and 0.4werepreparedat600 1C for2hwithsolublesinteringaidsofSb2S3 and Te.Defectchemistrywas studied bymeasuringstructuralandelectricalpropertiesofMg-dopedCZTSeasafunctionofdopant concentration. Exceptat x¼0, allMg-dopedCZTSepelletsshowedan n-type behavior.TheMg-doped CZTSe pelletsshowedan n-type behavior. n-TypeMg-CZTSepelletsat x¼0.1showedthehighest electrical conductivityof24.6Scm 1 and thenetholemobilityof120cm2 V 1 s 1, whiletheywere 11.8Scm 1 and 36.5cm2 V 1 s 1 for theundoped p-type CZTSe.Mgdopantisastrongpromoterof electrical mobility.MgdopantbehavesasadonordefectinCZTSeata5%dopingcontent,butisalsoused as anacceptoratahighcontentabove5%.MgdopinghasfurtherdevelopedCZTSeintoapromising semiconductor.	en_US
dc.language.iso	en	en_US
dc.subject	Keywords: Cu2ZnSnSe4 Reactivesintering Electrical property Extrinsic defect	en_US
dc.title	Mg dopantinCu2ZnSnSe4: An n-type formerandapromoter of electricalmobilityupto120cm2 V 1 s 1	en_US
dc.type	Article	en_US