Characterizations of Indium-Doped Cu2SnSe3 Bulks Made by Reactive Sintering at 550 oC

Abstract

Abstract. Indium-doped Cu2SnSe3 bulk materials with the Cu2(Sn1-xInx)Se3 (In-x-CTSe) formula at x = 0, 0.05, 0.1, 0.15, and 0.2 were prepared at 550 ˚C for 2 h with soluble sintering aids of Sb2S3 and Te. Defect chemistry was studied by measuring structural and electrical properties of In-x-Cu2SnSe3 as a function of dopant concentration. In-x-CTSe pellets show p-type at x = 0, 0.05 and 0.1 and n-type at x = 0.15 and 0.2. The low hole concentration of 4.56×1017 cm-3 and high mobility of 410 cm2 V-1 s-1 were obtained for Cu2(Sn1-xInx)Se3 bulks at x= 0.1 (10% In). The explanation based upon the In-to-Cu antisite defect for the changes in electrical property was declared.