Characterization and Property of Mg-Doped Cu2SnSe3 Bulks with the Mg Substitution at the Sn Site

Abstract

Cu2(Sn1-xMgx)Se3 (Mg-x-CTSe) bulks at x = 0, 0.05, 0.1, 0.15, and 0.2 were prepared at 550 °C for 2 h. Defect chemistry was studied by measuring structural and electrical properties of Mg-doped Cu2SnSe3 as a function of the dopant concentration. Mg-x-CTSe pellets were p-type at x = 0, 0.05, and 0.1 and n-type at x = 0.15 and 0.2. The low hole concentration of 3.18×1017 cm-3, high mobility of 387 cm2 V-1 s-1, and low conduction of 20 S cm-1 were obtained for Cu2(Sn1-xMgx)Se3 bulks at x= 0.1 (5% Mg), as compared to 1.06×1018 cm-3, 209 cm2 V-1 s-1, and 36 S cm-1 for undoped one. The explanation based upon the Mg-to-Sn antisite defect for the changes in electrical properties was declared.